?2008 fairchild semiconductor corporation 1 www.fairchildsemi.com fqp11n40c/fqpf11n40c rev. c1 fqp11n40c/fqpf11n40c 400v n-channel mosfet may 2008 qfet ? fqp11n40c/fqpf11n40c 400v n-channel mosfet features ? 10.5 a, 400v, r ds(on) = 0.5 ? @v gs = 10 v ? low gate charge ( typical 28 nc) ? low crss ( typical 85pf) ?fast switching ? 100% avalanche tested ? improved dv/dt capability description these n-channel enhancement mode power field effect transis - tors are produced using fairchil d?s proprietary, planar stripe, dmos technology. this advanced technology has be en especially tailored to mini - mize on-state resistance, prov ide superior switching perfor - mance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high effi - ciency switched mode power supplies, active power factor cor - rection, electronic lamp ballast s based on half bridge topology. absolute maximum ratings * drain current limited by maximum junction temperature thermal characteristics to-220 fqp series g s d to-220f fqpf series g s d ? ? ? { { { ? ? ? { { { s d g symbol parameter fqp11n40c fqpf11n40c units v dss drain-source voltage 400 v i d drain current - continuous (t c = 25c) 10.5 10.5 * a - continuous (t c = 100c) 6.6 6.6 * a i dm drain current - pulsed (note 1) 42 42 * a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 360 mj i ar avalanche current (note 1) 11 a e ar repetitive avalanche energy (note 1) 13.5 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25c) 135 44 w - derate above 25c 1.07 0.35 w/ c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 c symbol parameter fqp11n40c fqpf11n40c units r jc thermal resistance, junction-to-case 0.93 2.86 c / w r cs thermal resistance, case-to-sink typ. 0.5 -- c / w r ja thermal resistance, junction-to-ambient 62.5 62.5 c / w
2 www.fairchildsemi.com fqp11n40c/fqpf11n40c rev. c1 fqp11n40c/fqpf11n40c 400v n-channel mosfet package marking and ordering information electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 5.7 mh, i as = 10.5a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 10.5a, di/dt 200a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature device marking device package reel size tape width quantity fqp11n40c fqp11n40c to-220 -- -- 50 fqpf11n40c fqpf11n40c to-220f -- -- 50 symbol parameter test conditions min. typ. max. units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 400 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.54 -- v/c i dss zero gate voltage drain current v ds = 400 v, v gs = 0 v -- -- 1 a v ds = 320 v, t c = 125c -- -- 10 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 5.25 a -- 0.43 0.53 ? g fs forward transconductance v ds = 40 v, i d = 5.25 a (note 4) -- 7.1 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 840 1090 pf c oss output capacitance -- 250 325 pf c rss reverse transfer capacitance -- 85 110 pf switching characteristics t d(on) turn-on delay time v dd = 200 v, i d = 10.5 a, r g = 25 ? (note 4, 5) -- 14 40 ns t r turn-on rise time -- 89 190 ns t d(off) turn-off delay time -- 81 170 ns t f turn-off fall time -- 81 170 ns q g total gate charge v ds = 320 v, i d = 10.5 a, v gs = 10 v (note 4, 5) -- 28 35 nc q gs gate-source charge -- 4 -- nc q gd gate-drain charge -- 15 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 10.5 a i sm maximum pulsed drain-source diode forward current -- -- 42 a v sd drain-source diode forward voltage v gs = 0 v, i s = 10.5 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 10.5 a, di f / dt = 100 a/ s (note 4) -- 290 -- ns q rr reverse recovery charge -- 2.4 -- c
3 www.fairchildsemi.com fqp11n40c/fqpf11n40c rev. c1 fqp11n40c/fqpf11n40c 400v n-channel mosfet typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage v ariation vs. s ource current and temperatue figure 5. capacitance characteristics figure 6. gate charge characteristics 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v notes : 1. 250 s pulse test 2. t c = 25 c i d , drain current [a] v ds , drain-source voltage [v] 246810 10 -1 10 0 10 1 150 c 25 c -55 c notes : 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0 5 10 15 20 25 30 35 40 0.5 1.0 1.5 2.0 v gs = 20v v gs = 10v note : t j = 25 c r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150 c notes : 1. v gs = 0v 2. 250 s pulse test 25 c i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 200 400 600 800 1000 1200 1400 1600 1800 2000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 5 10 15 20 25 30 0 2 4 6 8 10 12 v ds = 250v v ds = 100v v ds = 400v note : i d = 10.5a v gs , gate-source voltage [v] q g , total gate charge [nc]
4 www.fairchildsemi.com fqp11n40c/fqpf11n40c rev. c1 fqp11n40c/fqpf11n40c 400v n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9-1. maximum safe op erating area figure 9-2. maximum safe operating area of fqp11n40c of fqpf11n40c figure 10. maximum drain current -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 5.25 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ c] 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 100 ms 10 s dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 c 2. t j = 150 c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 100 ms 10 s dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 c 2. t j = 15 c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 2 4 6 8 10 12 i d , drain current [a] t c , case temperature [ c]
5 www.fairchildsemi.com fqp11n40c/fqpf11n40c rev. c1 fqp11n40c/fqpf11n40c 400v n-channel mosfet typical performance characteristics (continued) figure 11-1. ransient thermal response curve of fqp11n40c figure 11-2. ransient thermal response curve of fqpf11n40c 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 n o te s : 1 . z jc (t) = 0.93 c/w max. 2 . d u ty f a cto r, d = t 1 /t 2 3 . t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , s q uare w ave p ulse d uration [sec] t 1 p dm t 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : ? 1. z jc (t) = 2.86 /w max. ? 2. d uty f actor, d = t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2
6 www.fairchildsemi.com fqp11n40c/fqpf11n40c rev. c1 fqp11n40c/fqpf11n40c 400v n-channel mosfet gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k ? 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k ? 200nf 12v same type as dut v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p
7 www.fairchildsemi.com fqp11n40c/fqpf11n40c rev. c1 fqp11n40c/fqpf11n40c 400v n-channel mosfet peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
8 www.fairchildsemi.com fqp11n40c/fqpf11n40c rev. c1 fqp11n40c/fqpf11n40c 400v n-channel mosfet mechanical dimensions 4.50 0.2 0 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.1 0 ?.0 5 0.50 +0.10 ?.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220 dimensions in millimeters
9 www.fairchildsemi.com fqp11n40c/fqpf11n40c rev. c1 fqp11n40c/fqpf11n40c 400v n-channel mosfet mechanical dimensions (continued) (7.00) (0.70) max1.47 (30 ) #1 3.30 0.1 0 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45 ) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.2 0 0.35 0.10 ?.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?.05 to-220f dimensions in millimeters
10 www.fairchildsemi.com fqp11n40c/fqpf11n40c rev. c1 fqp11n40c/fqpf11n40c 400v n-channel mosfet rev. i34 trademarks the following includes register ed and unregistered trademarks and service marks, ow ned by fairchild semiconductor and/or its gl obal subsidianries, and is not intended to be an exhaustive list of all such trademarks. * ezswitch? and flashwriter ? are trademarks of system general corporati on, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further no tice to any products herein to improve reliability, function, or design. fa irchild does not assume any liability arising out of the application or use of any product or circuit descri bed herein; neither does it convey any license under its patent rights, nor the rights of others. these spec ifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically th e warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express wr itten approval of fairchild semiconductor corporation. as used herein: 1. life support devices or system s are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose fail ure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? ecospark ? efficentmax? ezswitch? * ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green fps? green fps? e-series? gto? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? millerdrive? motionmax? motion-spm? optologic ? optoplanar ? ? pdp-spm? power-spm? powertrench ? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world 1mw at a time? smartmax? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 supermos? ? the power franchise ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? serdes? uhc ? ultra frfet? unifet? vcx? visualmax? tm ? tm tm datasheet identification product status definition advance information formative or in design this datasheet contains the design s pecifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminar y data; supplementary data will be pub- lished at a later date. fairchild semic onductor reserves the right to make changes at any time without notice to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production this datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only.
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